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MAX4630EUD datasheet

General DeionThe MAX4620/MAX4630/MAX4640 low-voltage, high- ESD-protected, quad, single-pole/single-throw (SPST) analog switches are pin-compatible replacements for the industry-standard 74HC4066 analog switch. The normally open (NO) and normally closed (NC) pins areprotected against ±15kV elec...

· 1701LJC

XILNX   PLCC20   RON t 4 W Typical Less Than 0.25 ns−Max Delay Through Switch Nearly Zero Standby Current No Circuit Bounce Control Inputs are TTL/CMOS Compatible Pin−For−Pin Compatible With QS3400, FST3400, CBT3400 All Popular Packages: SOIC−24, TSSOP−24, QSOP−24 All ...

· RFG70N06

FAIRCHILD   06+   Quiescent Voltage Output: With no magnetic field present the device is in the quiescent state and the voltage output is approximately equal to one-half the supply voltage (VOQ VCC/2) over the operating voltage and temperature range. The change in quiescent voltage output over temperature give...

· 2SK1829

TOS   09+    Parameter Read cycle time Address access time Chip select1 access time Chip select2 access time Output enable access time Chip select1 output set time Chip select1 output floating Chip select2 output set time Chip select2 output floating Output enable output set time Output e...

· DM74S174N

NS   800   98   The MT88L70 monolithic DTMF receiver offers small size, low power consumption and high performance, with 3 volt operation. Its architecture consists of a bandsplit filter section, which separates the high and low group tones, followed by a digital counting section which verifies the frequency ...

· LC03-6.TB

SEMTECH   SOP8   2000   Gen Note: Exceeding the Absolute Maximum Ratings may damage the device. Gen Note: Parameters with min. or max. values are 100% tested at TA = 25 C. Gen Note: Ripple rejection is @ 60 dB when f = 400 Hz, CL = 10 µF, CN = 0.1 µF, input noise = 100 mVrms, VIN = VOUT(TYP) + 1.5 V and...

· AM188EM-33KC

AMD   QFP   07+   Failsafe Operation These devices provide a failsafe operating mode to guard against input fault conditions as defined in EIA422A and EIA423A standards. These fault condi- tions are (1) drive in power-off condition, (2) receiver not interconnected with driver, (3) open-circuited intercon-...

· ADG201HSAQ

ADI   00+   An external sense resistor limits the maximum charge current as a safety precaution against a user connecting a wall adapter with the incorrect or no current limit. The internal MOSFET prevents reverse battery current from flowing if the input voltage is shorted to ground, eliminat- ing the n...

· DG303AAK

intersil   N/A   Oscillator Master Clock (CMOS Output). For crystal operation, a 20MHz crystal is connected from this pin to OSCi, see Figure 9. Not suitable for driving other devices. For clock oscillator operation, this pin is left unconnected, see Figure 8.

· 2MI50S-050

FUJI   Lead Temperature (1.6mm or 1/16-inch from case for 10s)+260C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicate...

· S22MD1V

SHARP   DIP/SMD   05+   C 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers On-chip emulation support logic (Enhanced Hooks Technology TM) 32K byte on-chip ROM (with optional ROM protection) C alternatively up to 64K byte external program memory Up to 64K byte e...

· LT1080MJ

LT   CDIP   The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and effi- ciency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the u...

· IDT7205L50TP

IDT   DIP   02+   

· UPB8283C

NEC    Three-phase bipolar drive Direct PWM drive Built-in forward/reverse switching circuit Full complement of built-in protection circuits, including current limiter, undervoltage protection circuit, motor lockup protection circuit, and thermal protection circuit. • Can be contro...

· LT1012AMH/883

N/A   ABSOLUTE MAXIMUM RATINGS (per diode)) IFRMSRMS Forward Current (TJ = TVJM) IFAVAverage Forward Current IFSMMaximum Surge Forward Current tp = 10ms, 50Hz IARReptetive Avalande Current VA = 1.5 VRRM, f = 10KHz TSTGStorage Temperature Junction TemperatureTJ PTOTTotal Power Dissipation

· HP4936DY

INTERSIL   02+    4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

· MM1038BFF

SOP5.2mm   1994   Hynix HYMD264G726(L)4M-K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strob...

· EP20K300EFC672-1

ALTERA   • Input voltage range: 2.5V to 16V • High output voltage accuracy of 0.75% over C5C to +60˚C and 1.5% over temperature • Current Limit 5% accurate from C5C Tj + 125C • Programmable End-of-Charge Flag • Analog output proportional to output current &...

· TMP01E

AD   SOP-8   06+   The integrated high performance USB transceivers allow the ISP1563 to handle all Hi-Speed USB transfer speed modes: high-speed (480 Mbit/s), full-speed (12 Mbit/s) and low-speed (1.5 Mbit/s). The ISP1563 provides four downstream ports, allowing simultaneous connection of USB devices at diff...

· LTC1337CSW

LT   790   The Atmel cell implements a rich and powerful set of logic functions, stemming from 44 logical cell states which per- mutate into 72 physical states. Some states use both A and B inputs. Other states are created by selecting the 1 input on either or both of the input multiplexers.

· FQP8N90C

9800   TO   The HSMS-270x series of clipping/clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductor contact formed between a metal and an n-doped or a p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction ...

New Part Number

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